Device performance of poly-Si thin-film transistors fabricated on ysz crystallization-lnduction layer via a two-step irradiation method using pulsed laser

Abstract

In this study, we fabricated and investigated device performance of poly-Si thin-film transistors (TFTs) via a two-step pulsed-laser annealing (PLA) method on two kinds of substrates namely glass and YSZ*/glass. It was found that TFTs on YSZ/glass exhibited much better pertormance and uniformity among devices, e.g., they showed an average mobility of ~80 cm²/Vs and Standard deviation of ~18 cm²/Vs, respectively, compared with ~40 cm²/Vs and ~28 cm²/Vs of TFTs on glass substrates, respectively. This result can be attributed to the better crystalline quality of the Si film on the YSZ/glass and the uniform distribution of grains as well as crystalline detects, which demonstrates the effectiveness of the crystallization-induction effect of the YSZ layer. (*YSZ: Yttria-Stabilized Zirconia).