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https://dspace.ctu.edu.vn/jspui/handle/123456789/4990
Title: | Electron distribution in polar heterojunctions within a realistic model |
Authors: | Nguyễn, Thành Tiên Dinh, Nhu Thao Doan, Nhat Quang Phạm, Thị Bích Thảo |
Keywords: | Hetero-junction Polar semiconductor Electron distribution Interface polarization charge Finite potential barrier Modulation doping |
Issue Date: | 2015 |
Series/Report no.: | Physica B;479 .- p.62-66 |
Abstract: | We present a theoretical study of the electron distribution, i.e., two-dimensional electron gas (2DEG) in polar heterojunctions (HJs) within a realistic model. The 2DEG is confined along the growth direction by a triangular quantum well with afinite potential barrier and a bent bandfigured by all confinement sources. Therein, interface polarization charges take a double role: they induce a confining potential and, furthermore, they can make some change in other confinements, e.g., in the Hartree potential from ionized impurities and 2DEG. Confinement by positive interface polarization charges is necessary for the ground state of 2DEG existing at a high sheet density. The 2DEG bulk density is found to be increased in the barrier, so that the scattering occurring in this layer (from interface polarization charges and alloy disorder) becomes paramount in a polar modulation-doped HJ. |
URI: | http://localhost:8080//jspui/handle/123456789/4990 |
Appears in Collections: | Tạp chí quốc tế |
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Your IP: 18.222.161.119 |
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