Please use this identifier to cite or link to this item: https://dspace.ctu.edu.vn/jspui/handle/123456789/4990
Title: Electron distribution in polar heterojunctions within a realistic model
Authors: Nguyễn, Thành Tiên
Dinh, Nhu Thao
Doan, Nhat Quang
Phạm, Thị Bích Thảo
Keywords: Hetero-junction
Polar semiconductor
Electron distribution
Interface polarization charge
Finite potential barrier
Modulation doping
Issue Date: 2015
Series/Report no.: Physica B;479 .- p.62-66
Abstract: We present a theoretical study of the electron distribution, i.e., two-dimensional electron gas (2DEG) in polar heterojunctions (HJs) within a realistic model. The 2DEG is confined along the growth direction by a triangular quantum well with afinite potential barrier and a bent bandfigured by all confinement sources. Therein, interface polarization charges take a double role: they induce a confining potential and, furthermore, they can make some change in other confinements, e.g., in the Hartree potential from ionized impurities and 2DEG. Confinement by positive interface polarization charges is necessary for the ground state of 2DEG existing at a high sheet density. The 2DEG bulk density is found to be increased in the barrier, so that the scattering occurring in this layer (from interface polarization charges and alloy disorder) becomes paramount in a polar modulation-doped HJ.
URI: http://localhost:8080//jspui/handle/123456789/4990
Appears in Collections:Tạp chí quốc tế

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