Please use this identifier to cite or link to this item: https://dspace.ctu.edu.vn/jspui/handle/123456789/4990
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dc.contributor.authorNguyễn, Thành Tiên-
dc.contributor.authorDinh, Nhu Thao-
dc.contributor.authorDoan, Nhat Quang-
dc.contributor.authorPhạm, Thị Bích Thảo-
dc.date.accessioned2018-11-20T03:37:56Z-
dc.date.available2018-11-20T03:37:56Z-
dc.date.issued2015-
dc.identifier.urihttp://localhost:8080//jspui/handle/123456789/4990-
dc.description.abstractWe present a theoretical study of the electron distribution, i.e., two-dimensional electron gas (2DEG) in polar heterojunctions (HJs) within a realistic model. The 2DEG is confined along the growth direction by a triangular quantum well with afinite potential barrier and a bent bandfigured by all confinement sources. Therein, interface polarization charges take a double role: they induce a confining potential and, furthermore, they can make some change in other confinements, e.g., in the Hartree potential from ionized impurities and 2DEG. Confinement by positive interface polarization charges is necessary for the ground state of 2DEG existing at a high sheet density. The 2DEG bulk density is found to be increased in the barrier, so that the scattering occurring in this layer (from interface polarization charges and alloy disorder) becomes paramount in a polar modulation-doped HJ.vi_VN
dc.language.isoenvi_VN
dc.relation.ispartofseriesPhysica B;479 .- p.62-66-
dc.subjectHetero-junctionvi_VN
dc.subjectPolar semiconductorvi_VN
dc.subjectElectron distributionvi_VN
dc.subjectInterface polarization chargevi_VN
dc.subjectFinite potential barriervi_VN
dc.subjectModulation dopingvi_VN
dc.titleElectron distribution in polar heterojunctions within a realistic modelvi_VN
dc.typeArticlevi_VN
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