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dc.contributor.authorNguyễn, Thành Tiên-
dc.contributor.authorPhạm, Thị Bích Thảo-
dc.contributor.authorNguyen, Tieu Tin-
dc.contributor.authorNguyen, Nhut Tuan Hung-
dc.date.accessioned2018-11-20T03:38:07Z-
dc.date.available2018-11-20T03:38:07Z-
dc.date.issued2017-
dc.identifier.urihttp://localhost:8080//jspui/handle/123456789/4991-
dc.description.abstractThe linear intersubband optical absorption in the polarization semiparabolic quantum wells (SPQWs) are investigated for typical AlN/AlₓGa ₁­­­­­ ­_ ₓ N/AlN. First, the one-dimensional Poisson and Schrödinger equations have been solved by the variational method within a finite potential barrier model and a bent band figured by all confinement sources (realistic model). Then, the intersubband optical absorption between the lowest two subbands has been theoretically studied under an uniform external electric field. Computed results including the effective confining potential profile, the wave function and the distribution of electron gas in quantum wells, intersubband optical absorption coefficient have been discussed. Our calculation shows that the positive interface polarization charges affect on the distribution of the two-dimensional electron gas (2DEG) in SPQWs so it has great influences on the total optical absorption coefficients significantly.vi_VN
dc.language.isoenvi_VN
dc.relation.ispartofseriesPhysica B;519 .- p.63-68-
dc.subjectLinear optical absorptionvi_VN
dc.subjectLinear optical absorption Intersubband transitionvi_VN
dc.subjectConfining potential profilevi_VN
dc.subjectInterface polarization chargevi_VN
dc.titleLinear intersubband optical absorption in the semiparabolic quantum wells based on AlN/AlGaN/AlN under a uniform electric fieldvi_VN
dc.typeArticlevi_VN
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