Please use this identifier to cite or link to this item:
https://dspace.ctu.edu.vn/jspui/handle/123456789/5259
Title: | Control of the Metal–Insulator Transition at Complex Oxide Heterointerfaces through Visible Light |
Authors: | Lin, Jheng-Cyuan He, Jr-Hau Tsai, Din Ping Gwo, Shangjr Ikuhara, Yuichi Yoshida, Ryuji Nguyen, Van Chien Huang, Rong Wu, Hui Jun Hsu, Wei-Lun Huan, Po-Cheng Lin, Tai-Te Tsai, Dung-Sheng Chiu, Ya-Ping Chu, Ying-Hao Lin, Jiunn-Yuan Vũ, Thanh Trà |
Issue Date: | 2015 |
Series/Report no.: | Advanced Materials;28 .- p.764-770 |
Abstract: | Lattice, charge, orbital, and spin degrees of freedom in condensed matter determine the fundamental properties of materials. The control of these degrees of freedom makes up the cornerstone of current modern electronic devices. However, in the diligent pursuit of multifunctional electronics more sophisticated controls of these degrees of freedom in new functional materials are highly desired. The functionalities at the interfaces have been one of the foundations to build up current semiconductor industry. Novel phenomena at artificial heterointerfaces have been attracting extensive scientific attentions in both condensed matter physics and materials science. Recently, lots of studies have suggested that complex oxide interfaces provide a powerful route to manipulate these degrees of freedom and offer new possibilities for the next generation devices. The representative discovery of complex oxide interface is an observation of a 2DEG at the LaAlO₃/SrTiO₃ (LAO/STO) heterointerface. |
URI: | http://localhost:8080//jspui/handle/123456789/5259 |
Appears in Collections: | Tạp chí quốc tế |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
_file_ | 1.96 MB | Adobe PDF | View/Open | |
Your IP: 18.191.171.72 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.