Control of the Metal–Insulator Transition at Complex Oxide Heterointerfaces through Visible Light

Abstract

Lattice, charge, orbital, and spin degrees of freedom in condensed matter determine the fundamental properties of materials. The control of these degrees of freedom makes up the cornerstone of current modern electronic devices. However, in the diligent pursuit of multifunctional electronics more sophisticated controls of these degrees of freedom in new functional materials are highly desired. The functionalities at the interfaces have been one of the foundations to build up current semiconductor industry. Novel phenomena at artificial heterointerfaces have been attracting extensive scientific attentions in both condensed matter physics and materials science. Recently, lots of studies have suggested that complex oxide interfaces provide a powerful route to manipulate these degrees of freedom and offer new possibilities for the next generation devices. The representative discovery of complex oxide interface is an observation of a 2DEG at the LaAlO₃/SrTiO₃ (LAO/STO) heterointerface.