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dc.contributor.authorChu, Y. Y.-
dc.contributor.authorLiao, Y. F.-
dc.contributor.authorVũ, Thanh Trà-
dc.contributor.authorYang, J. C.-
dc.contributor.authorLiu, W. Z.-
dc.contributor.authorChu, Y. H.-
dc.contributor.authorLin, J. Y.-
dc.contributor.authorHuang, J. H.-
dc.contributor.authorWeinen, J.-
dc.contributor.authorAgrestini, S.-
dc.contributor.authorTsuei, K. D.-
dc.contributor.authorHuang, D. J.-
dc.date.accessioned2018-11-21T11:31:08Z-
dc.date.available2018-11-21T11:31:08Z-
dc.date.issued2011-
dc.identifier.urihttp://localhost:8080//jspui/handle/123456789/5269-
dc.description.abstractWe investigated the electronic reconstruction at the n-type LaAlO₃/SrTiO₃ interface with hardx-ray photoelectron spectroscopy (HAXPES) under grazing incidence. By exploiting the collapseof evanescent x-ray waves and the abrupt increase of x-ray absorption at the critical incidenceangle, our HAXPES study reveals a 2% electronic reconstruction from Ti⁴⁺ to Ti³⁺ occurring nearthe interface. Such an electronic reconstruction also extends from the interface into SrTiO₃ with adepth of about 48 Å (~12 unit cells) and an estimated total charge transfer of ~0.24 electrons pertwo-dimensional unit cell.vi_VN
dc.language.isoenvi_VN
dc.relation.ispartofseriesApplied Physics Letters;99 .- p.1-3-
dc.titleDistribution of electronic reconstruction at the n-type LaAIO₃/SrTiO₃ interface revealed by hard x-ray photoemission spectroscopyvi_VN
dc.typeArticlevi_VN
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