Please use this identifier to cite or link to this item: https://dspace.ctu.edu.vn/jspui/handle/123456789/22674
Title: Device performance of poly-Si thin-film transistors fabricated on ysz crystallization-lnduction layer via a two-step irradiation method using pulsed laser
Authors: Mai, Thi Kieu Lien
Susumu Horita
Keywords: PLA
Solid-phase crystallization
Low-temperature crystallization
Silicon thin-film
YSZ
Amorphous Silicon
Polycrystalline Silicon
Issue Date: 2018
Series/Report no.: Journal of Science, The University of DaNang-University of Science and Education;Số 26(05) .- Tr.18-22
Abstract: In this study, we fabricated and investigated device performance of poly-Si thin-film transistors (TFTs) via a two-step pulsed-laser annealing (PLA) method on two kinds of substrates namely glass and YSZ*/glass. It was found that TFTs on YSZ/glass exhibited much better pertormance and uniformity among devices, e.g., they showed an average mobility of ~80 cm²/Vs and Standard deviation of ~18 cm²/Vs, respectively, compared with ~40 cm²/Vs and ~28 cm²/Vs of TFTs on glass substrates, respectively. This result can be attributed to the better crystalline quality of the Si film on the YSZ/glass and the uniform distribution of grains as well as crystalline detects, which demonstrates the effectiveness of the crystallization-induction effect of the YSZ layer. (*YSZ: Yttria-Stabilized Zirconia).
URI: http://dspace.ctu.edu.vn/jspui/handle/123456789/22674
ISSN: 1859-4603
Appears in Collections:Khoa học Trường ĐH Sư phạm - Đại học Đà Nẵng

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